DocumentCode
1304415
Title
Ultra high transconductance 0.25 mu m gate MESFET with strained InGaAs buffer layer
Author
Cappy, A. ; Dambrine, G. ; Cordier, Yvon ; Druelle, Y. ; Legry, P.
Author_Institution
Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve D´´Ascq, France
Volume
26
Issue
3
fYear
1990
Firstpage
161
Lastpage
162
Abstract
The authors have successfully fabricated MBE-grown GaAs field effect transistors employing a strained MQW buffer layer. Quarter micron gate device showed transconductance as high as 1.460 mS/mm (900 mS/mm extrinsic) at a current density of 620 mA/mm. The measured fc was 75 GHz. These high transconductances are, to the authors´ knowledge, the best reported for GaAs MESFETs.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor quantum wells; solid-state microwave devices; 0.25 micron; 75 GHz; GaAs MESFETs; current density; cutoff frequency; quarter micron gate; semiconductors; strained InGaAs buffer layer; strained MQW buffer layer; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900109
Filename
82527
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