Title :
Submicron-gate ion-implanted In0.15Ga0.85As/GaAs MESFETs with graded indium composition
Author :
Wang, G.W. ; Feng, M. ; Kaliski, R. ; Kuang, J.B.
Author_Institution :
Ford Micorelectron. Inc., Colorado Springs, CO, USA
Abstract :
0.25 mu m and 0.5 mu m gate ion-implanted MESFETs have been fabricated on In0.15Ga0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs substrates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave performance. From S-parameter measurements, extrinsic current gain cutoff frequencies ft of 120 and 61 GHz are obtained for the 0.25 mu m and 0.5 mu m gate MESFETs, respectively. The authors investigate the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion implantation; solid-state microwave devices; vapour phase epitaxial growth; 0.25 micron; 0.5 micron; 120 GHz; 61 GHz; DC performance; EHF; GaAs substrates; III-V semiconductors; In 0.15Ga 0.85As epitaxial layers; In 0.15Ga 0.85As-GaAs; MOCVD; S-parameter measurements; SHF; VPE; extrinsic current gain cutoff frequencies; graded In composition; heterointerface; ion-implanted MESFETs; microwave performance; small-bandgap InGaAs materials; submicron-gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900128
