DocumentCode :
1304575
Title :
Evaluation of delay-time degradation of low-voltage BiCMOS based on a novel analytical delay-time modeling
Author :
Fujishima, Minoru ; Asada, Kunihiro ; Sugano, Takuo
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume :
26
Issue :
1
fYear :
1991
fDate :
1/1/1991 12:00:00 AM
Firstpage :
25
Lastpage :
31
Abstract :
The degradation of delay time of totem-pole BiCMOS, CBiCMOS, and BiNMOS circuits by supply voltage reduction is evaluated by a novel delay-time model. It has been found that base-collector capacitance plays a greater role in determining the delay time than other parasitic capacitances in BiCMOS circuits. It is concluded that when the input signal swings fully from zero to the supply voltage, the minimum supply voltage to guarantee high-speed operation over CMOS circuits is almost the same for the three kinds of BiCMOS circuits. When the input swing is reduced by the base-emitter voltage, however, BiNMOS and CBiCMOS circuits can operate on a lower supply voltage than totem-pole BiCMOS circuits
Keywords :
BIMOS integrated circuits; delays; semiconductor device models; BiNMOS; CBiCMOS; analytical delay-time modeling; base-collector capacitance; delay-time degradation; equivalent resistance model; minimum supply voltage; parasitic capacitance; totem-pole BiCMOS; BiCMOS integrated circuits; Current measurement; Degradation; Delay effects; Equations; MOS devices; MOSFETs; Parasitic capacitance; Semiconductor device modeling; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.65706
Filename :
65706
Link To Document :
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