Title :
Feedback FET logic: a robust, high-speed low-power GaAs logic family
Author :
Fulkerson, David E.
Author_Institution :
Honeywell Syst. & Res. Center, Bloomington, MN, USA
fDate :
1/1/1991 12:00:00 AM
Abstract :
Feedback FET logic (FFL) with a special output stage that enables it to drive high on-chip capacitances with low power is discussed. FFL is robust in the face of process and temperature variations. The basic FFL gate is a NOR, but complex gates such as AND-OR-NOT are also practical. FFL is two to four times faster than comparable GaAs direct-coupled FET logic and Si CMOS and Si BiCMOS when driving on-chip capacitances that are typical of large ICs. FFL power at 200 MHz is also lower than CMOS and BiCMOS power by a factor of 2 to 4
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated logic circuits; 200 MHz; AND-OR-NOT; GaAs; HEMT; MODFET; Si BiCMOS; Si CMOS; direct-coupled FET logic; driving on-chip capacitances; feedback FET logic; high on-chip capacitances; low power dissipation; output stage; power comparison; semiconductors; speed comparison; CMOS logic circuits; Capacitance; FETs; Gallium arsenide; Logic gates; Output feedback; Pulse inverters; Robustness; Transistors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
