Experimental analysis of HEMT behavior under low-temperature conditions

Author

Belache, Areski ; Vanoverschelde, André ; Salmer, Georges ; Wolny, Michel

Author_Institution

Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve-D´´Ascq, France

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

3

Lastpage

13

Abstract

An experimental analysis of high-electron-mobility transistor (HEMT) behavior under low-temperature conditions is presented. Specific measurements have been performed to investigate the deep-level trapping effects on basic device characteristics such as carrier concentration, electron mobility in the structure, and access resistances. The influence of the collapse phenomenon on the microwave device parameters completes the knowledge of these parasitic effects. Explanation of mechanisms responsible for the anomalous phenomena and means to suppress them are reported. Microwave parameters measurements demonstrate that HEMTs showing no parasitic collapse effects exhibit improved performance at 77 K. Large improvements of current gain cutoff frequency and noise figure are presented

Keywords

carrier density; carrier mobility; cryogenics; deep levels; electron device noise; high electron mobility transistors; solid-state microwave devices; 77 K; GaAlAs-GaAs; HEMT behavior; access resistances; carrier concentration; collapse phenomenon; current gain cutoff frequency; deep-level trapping effects; electron mobility; low-temperature conditions; microwave device parameters; noise figure; parasitic effects; Current measurement; Electrical resistance measurement; Electron mobility; Electron traps; Frequency measurement; HEMTs; MODFETs; Microwave devices; Microwave measurements; Performance evaluation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65729

Filename

65729