DocumentCode :
1304673
Title :
AlGaAs/GaAs heterojunction bipolar transistors fabricated with various collector-carrier-concentrations
Author :
Ota, Yoshiharu ; Hirose, Tatsuya ; Ryoji, A. ; Inada, M.
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
26
Issue :
3
fYear :
1990
Firstpage :
203
Lastpage :
205
Abstract :
Effects of the collector carrier concentration Nc of AlGaAs/GaAs self-aligned HBT´s with a buried collector on high frequency performances are studied experimentally. fT increases monotonically with Nc, while fmax has a maximum point for the intermediate doping of Nc=5*1016 cm-3.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; AlGaAs-GaAs; HBT; III-V semiconductors; buried collector; collector-carrier-concentrations; heterojunction bipolar transistors; high frequency performances; microwave device;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900137
Filename :
82555
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1304673
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