A generalized analytical model for the quantum well injection transit time diode

Author

Song, Inchae ; Pan, Dee-Son

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

14

Lastpage

22

Abstract

A generalized small-signal model of the quantum well injection transit time (QWITT) diode derived from the authors´ previous large-signal model (see. ibid., vol.35, p.2315-2322, Dec. 1987), which includes not only the carrier space-charge effects but also the velocity transient effects and the carrier diffusion effects is presented. Simple closed forms for the device impedance have been obtained for efficient computation, where only one-dimensional integrations are required. It can be applied to any fashion of time dependence of the velocity transient and diffusivity transient, adopting a Gaussian form for the spatial profile of injected carriers. Using the formulas, the small-signal behavior and the design criteria for the QWITT diode are analyzed. Large-signal impedance of the device can also be estimated by the formulas

Keywords

negative resistance; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; transients; transit time devices; tunnel diodes; QWITT diode; analytical model; carrier diffusion effects; carrier space-charge effects; cutoff frequency; device impedance; injected corner spatial profile; large-signal impedance; one-dimensional integrations; quantum well injection transit time diode; resonant tunnelling diode; small-signal model; specific negative resistance; velocity transient effects; Analytical models; Design optimization; Diodes; Frequency; Impedance; Oscillators; Power generation; Quantum computing; Temperature; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65730

Filename

65730