Mobility profiles in short and narrow GaAs MESFET channels

Author

Steiner, Klaus ; Mikami, Hitoshi ; Uchitomi, Naotaka ; Toyoda, Nobuyuki

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

23

Lastpage

27

Abstract

Gate-voltage-dependent mobility profiles in long-, short-, wide-, and narrow-channel WN_x-BPLDD (buried p-type buffer lightly doped drain region) GaAs MESFETs have been determined (L_G=10, 4, 2, 1, 0.8, 0.5, 0.3 μm, W_G=20 μm; W_G-100, 40, 20, 10, 4, 2 μm, L _G=0.5 μm). The mobility mainly depends on the channel width, while the gate length has much less influence. Thus, using proper gate dimensions the channel mobility can be tuned. The highest drift mobility values agree quite well with the measured Hall mobilities. Mobility profiles of large-area MESFETs are probably degraded by the WN _x-gate fabrication process. Injected excess charges at gate length below 0.5 μm distorts the mobility evaluations

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; tungsten; 0.3 to 10 micron; GaAs; Hall mobilities; MESFET channels; WN_x-GaAs; WN_x-gate fabrication; buried p-type buffer lightly doped drain region; channel mobility tuning; channel width; drift mobility; gate length; gate voltage dependent mobility profiles; injected excess charges; narrow-channel; short channel; Buffer layers; Degradation; Distortion measurement; Fabrication; Gallium arsenide; Hall effect; Large scale integration; MESFETs; Optical distortion; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65731

Filename

65731