DocumentCode
1304693
Title
Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation
Author
Bradley, M.A. ; Julien, F.H. ; Gilles, J.P. ; Gao, Yuan ; Rao, E.V.K. ; Razeghi, M. ; Omnes, F.
Author_Institution
Inst. d´Electron, Fondamentale, Paris Univ., Orsay, France
Volume
26
Issue
3
fYear
1990
Firstpage
208
Lastpage
210
Abstract
Germanium implantation of InGaAs/InP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.
Keywords
III-V semiconductors; chemical interdiffusion; gallium arsenide; germanium; indium compounds; ion implantation; photoluminescence; secondary ion mass spectra; semiconductor quantum wells; III-V semiconductors; InGaAs:Ge-InP:Ge; fast-diffusing implantation defects; interdiffusion; ion implantation; lattice-matched composition; low-temperature photoluminescence; quantum wells; secondary ion mass spectroscopy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900140
Filename
82558
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