Title :
Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer
Author :
Ishikawa, Masatoshi ; Tsuburai, Y. ; Uematsu, Yutaka
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
638 nm room temperature (25 degrees C) CW operation was successfully achieved by InGaAlP visible light laser diodes with a quaternary active layer. A transverse mode stabilised selectively buried ridge-waveguide structure was fabricated by metalorganic chemical vapour deposition. The threshold current was 100 mA at 25 degrees C and CW operation was attained at up to 50 degrees C. The oscillation wavelength was the shortest for room temperature CW operations of laser diodes ever reported.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; laser transitions; optical waveguides; semiconductor junction lasers; 100 mA; 25 to 50 degC; 638 nm; CW operation; III-V semiconductors; InGaAlP laser diodes; MOCVD; metalorganic chemical vapour deposition; quaternary active layer; ridge-waveguide structure; room-temperature; selectively buried; semiconductor lasers; short wavelength operation; threshold current; transverse mode stabilised; visible light laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900142
