Conductivity-type conversion in multiple-implant/multiple-anneal SOI

Author

Buczkowski, Andrzej ; Radzimski, Zbigniew J. ; Rozgonyi, George A.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

61

Lastpage

66

Abstract

Results of an investigation of the electrical properties of superficial silicon and epitaxial capping layers grown on multiple-implant/anneal SIMOX and zone melt recrystallization substrates are presented. An unexpected SIMOX conductivity type change (from n to p) was observed in the SIMOX superficial layer, as well as in subsequently grown epi-layers. It is believed that the conductivity-type change is related to the presence of a process-induced acceptor impurity or an impurity (oxygen)-vacancy complex

Keywords

annealing; impurity-vacancy interactions; ion implantation; semiconductor epitaxial layers; semiconductor-insulator boundaries; zone melting; SIMOX; Si-SiO₂; conductivity type conversion; electrical properties; epitaxial capping layers; impurity vacancy complex; multiple-implant/multiple-anneal SOI; n-type conductivity; p-type conductivity; process-induced acceptor impurity; superficial Si; zone melt recrystallization substrates; Annealing; Conductivity; Contamination; Crystalline materials; Impurities; Inorganic materials; Insulation; Organic materials; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65737

Filename

65737