DocumentCode :
1304744
Title :
Low-Cost ZnO-Based Ultraviolet–Infrared Dual-Band Detector Sensitized With PbS Quantum Dots
Author :
Jayaweera, P Viraj Vishwakantha ; Pitigala, P.K.D.D.P. ; Jia Feng Shao ; Tennakone, Kirthi ; Perera, A.G.U. ; Jayaweera, Pradeep M ; Baltrusaitis, Jonas
Author_Institution :
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA
Volume :
57
Issue :
10
fYear :
2010
Firstpage :
2756
Lastpage :
2760
Abstract :
A low-cost photoconductive dual-band detector based on a ZnO film sensitized with lead sulfide quantum dots (PbS-QDs) is reported. The UV response arises from the interband absorption of UV radiation by ZnO, and the IR response is due to the absorption in the PbS-QDs. The detector exhibits UV response from 200 to 400 nm with a peak responsivity of 4.0 × 105 V/W and detectivity D* of 5.5 × 1011 Jones at 370 nm at room temperature. The observed visible-near IR response is from 500 to 1400 nm with a responsivity of 5.4 × 105 V/W and D* of 7.3 × 1011 Jones at 700 nm operating at room temperature. By increasing the PbS-QD size, the IR response can extend up to 2.9 μm.
Keywords :
II-VI semiconductors; IV-VI semiconductors; infrared detectors; lead compounds; semiconductor quantum dots; ultraviolet detectors; zinc compounds; PbS; ZnO; infrared response; interband absorption; photoconductive dual-band detector; quantum dots; temperature 293 K to 298 K; ultraviolet response; ultraviolet-infrared dual-band detector; wavelength 200 nm to 400 nm; wavelength 500 nm to 1400 nm; Absorption; Detectors; Dual band; Photonic band gap; Physics; Quantum dots; Zinc oxide; Dual band; ZnO; lead sulfide quantum dots (PbS-QDs); low cost; ultraviolet–infrared (UV–IR);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2059631
Filename :
5557770
Link To Document :
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