Temperature dependence of dynamic operation in ultra-thin CMOS/SIMOX

Author

Omura, Yasuhisa ; Izumi, Katsutoshi

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

101

Lastpage

106

Abstract

Dynamic characteristics of fully depleted ultra-thin film CMOS/SIMOX devices in the range from 50 to 300 K are presented. Discussion is focused on the propagation delay time of CMOS/SIMOX ring oscillators. Using a simple theory, it is shown that the measure propagation delay time is larger than the predicted delay time. Adopting a simple theoretical assumption, it is strongly suggested that the propagation delay time is governed ultimately by the charging and discharging time of the inversion layer in off-to-on and on-to-off processes. The results are corroborated by the fact that fully depleted CMOS/SIMOX operate with extremely small parasitic capacitances

Keywords

CMOS integrated circuits; delays; integrated circuit technology; inversion layers; semiconductor-insulator boundaries; 50 to 300 K; CMOS/SIMOX ring oscillators; charging time; discharging time; dynamic operation; fully depleted CMOS/SIMOX; inversion layer; off-to-on process; on-to-off processes; propagation delay time; small parasitic capacitances; temperature dependence; ultra-thin CMOS/SIMOX; Dielectric constant; Immune system; Impurities; MOSFET circuits; Parasitic capacitance; Propagation delay; Ring oscillators; Semiconductor films; Silicon; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65742

Filename

65742