Title :
VIPMOS-a novel buried injector structure for EPROM applications
Author :
Wijburg, Rutger C. ; Hemink, Gertjan J. ; Middelhoek, Jan ; Wallinga, Hans ; Mouthaan, Ton J.
Author_Institution :
Fac. of Electr. Eng., Twente Univ., Enschede, Netherlands
fDate :
1/1/1991 12:00:00 AM
Abstract :
A buried injector is proposed as a source of electrons for substrate hot electrons injection. To enhance the compatibility with VLSI processing, the buried injector is formed by the local overlap of the n-well and p-well of a retrograde twin-well CMOS process. The injector is activated by means of punchthrough. This mechanism allows the realization of a selective injector without increasing the latchup susceptibility. The p-well profile controls the punchthrough voltage. The high injection probability and efficient electron supply mechanism lead to oxide current densities up to 1.0 Å.×cm-2. Programming times of 10 μs have been measured on nonoptimized cells. The realization of a structure for 5-V-only digital and analog applications is viable. A model of the structure for implementation in a circuit simulator, such as SPICE, is presented
Keywords :
CMOS integrated circuits; EPROM; VLSI; hot carriers; integrated circuit technology; 10 mus; EPROM applications; SPICE; VLSI processing; analog applications; buried injector structure; circuit simulator; electron supply mechanism; injection probability; latchup susceptibility; model; oxide current densities; p-well profile; programming times; punchthrough; retrograde twin-well CMOS process; substrate hot electrons injection; CMOS process; Channel hot electron injection; Circuit simulation; Current density; EPROM; Lead compounds; SPICE; Substrate hot electron injection; Very large scale integration; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
