Title :
An improved Early voltage model for advanced bipolar transistors
Author :
Yuan, J.S. ; Liou, J.J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
1/1/1991 12:00:00 AM
Abstract :
An improved Early voltage model reflecting the effect of bias variation is developed. The bias dependencies of the Early voltage are more prominent as the base width of the bipolar transistor decreases. Thus, using the conventional constant Early voltage model can result in considerable errors in modeling the advanced bipolar transistors which possess very thin base region. Comparisons between the present model and the conventional model at different bias conditions support this assertion. SPICE simulations are performed to demonstrate the impact of this study on the small-signal performance of bipolar-transistor integrated circuits
Keywords :
bipolar integrated circuits; bipolar transistors; semiconductor device models; Early voltage model; SPICE simulations; base width; bias variation; bipolar transistors; bipolar-transistor integrated circuits; small-signal performance; Bipolar transistors; Clocks; Convergence; Diodes; Feedback loop; Monitoring; Oscilloscopes; Pulse amplifiers; Space vector pulse width modulation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
