Synthesis, structure and photoluminescence of cubic silicon carbide nanowires

Large quantities of 3C-SiC nanowires (NWs) are synthesised under atmospheric pressure from the ball-milled SiO powders and activated carbon. The samples on the stack of carbon are determined to be pure 3C-SiC. 3C-SiC NWs synthesised at 1250 and 1300°C have a length of tens to hundreds of micrometres and a diameter of 40°80°nm. A higher synthesising temperature of 1350°C results in NWs together with nanoparticles. The nucleation of 3C-SiC NWs relates to vapour-solid reaction between SiO vapour and activated carbon. The residual oxygen in the chamber leads to the generation of CO gas, whose reaction with SiO vapour relates to the growth of the nanowires. There are two peaks at 416 and 439-nm in the photoluminescence line of the nanowires, which are ascribed to size confinement effect, defects and the oxygen vacancy in the amorphous SiO₂ layer.