DocumentCode :
1304962
Title :
New CdMnxTe quantum dots for application in light-emitting diodes
Author :
Rongfang Wang ; Yilin Wang ; Wenxiu Xia ; Xingming Wei ; Bin Li ; Liya Zhou
Author_Institution :
Sch. of Chem. & Chem. Eng., Guangxi Univ., Nanning, China
Volume :
7
Issue :
9
fYear :
2012
Firstpage :
978
Lastpage :
980
Abstract :
Cd1-xMnxTe quantum dots (QDs) were synthesised through a one-step approach in an aqueous medium, and a red-shift in the emission peak wavelength, from 542 nm to a long wavelength of 566 nm, was observed by doping Mn2+ ions into the CdTe QDs. A red light-emitting diode (LED) device was fabricated by combining red light-emitting Cd1-xMnxTe QDs with a near-UV InGaN LED chip. CIE colour coordinates of the LED at (0.56, 0.25) demonstrated a near red light-emitting LED. The results showed that the Cd1-xMnxTe QDs are good candidates for LED applications.
Keywords :
II-VI semiconductors; cadmium compounds; light emitting diodes; manganese compounds; red shift; semiconductor quantum dots; CIE colour coordinates; Cd1-xMnxTe; LED chip; doping; light emitting diode; one step approach; quantum dot; red shift; wavelength 542 nm to 566 nm;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2012.0540
Filename :
6319624
Link To Document :
بازگشت