DocumentCode :
1305211
Title :
MESFET fabrication on MOCVD grown Hg1-xCdxTe
Author :
Leech, P.W. ; Gwynn, P.J. ; Pain, G.N. ; Petkovic, N. ; Thompson, J.
Author_Institution :
Res. Labs., Telecom Australia, Clayton, Vic., Australia
Volume :
26
Issue :
4
fYear :
1990
Firstpage :
221
Lastpage :
222
Abstract :
The fabrication of the first MESFET structures on Hg1-xCdxTe is reported using MOCVD grown layers on GaAs substrates. The 6 mu m gate devices exhibited a room temperature transconductance of 1.0 mS/mm and pinch off voltage of -4.0 V. The Schottky barrier characteristics of the devices were critically dependent on the stoichiometric x ratio of the Hg1-xCdxTe with diode formation evident only at x >0.5.
Keywords :
II-VI semiconductors; Schottky gate field effect transistors; cadmium compounds; mercury compounds; semiconductor growth; vapour phase epitaxial growth; -4 V; 1 mS; 6 micron; GaAs; GaAs substrates; Hg 1-xCd xTe; II-VI semiconductors; MESFET fabrication; MOCVD grown layers; Schottky barrier characteristics; gate length; pinch off voltage; pinchoff voltage; room temperature transconductance; stoichiometric ratio;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900149
Filename :
82571
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1305211
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