Title :
High sensitivity, high gain, long wavelength OEIC receiver with monolithically integrated three-stage preamplifier
Author :
Shimizu, J. ; Suzaki, T. ; Terakado, T. ; Fujita, S. ; Kasahara, K. ; Itoh, Takayuki ; Suzuki, A.
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
6/7/1990 12:00:00 AM
Abstract :
A GaAs-on-InP long wavelength OEIC receiver, with a monolithically integrated three-stage preamplifier, was designed using SPICE and fabricated. The three-stage OEIC receiver exhibited excellent performances, such as -32.5 dBm receiver sensitivity and 85 dB Omega transimpedance at 600 Mbit/s. These results indicate the feasibility of integrating large scale electronic circuits, which are considered as the OEIC merits, caused by using both GaAs-on-InP heterostructures and SPICE.
Keywords :
III-V semiconductors; digital communication systems; error statistics; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; preamplifiers; receivers; wideband amplifiers; 600 Mbit/s; 900 MHz; BER; GaAs-InP; MESFET circuit; OEIC receiver; SPICE; bit error rate; high gain; high sensitivity; long wavelength; monolithically integrated three-stage preamplifier; optical communications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900538
