Title :
Ultra-low reflectivity broadband 1.5 mu m GaInAsP semiconductor optical amplifiers
Author :
Barnsley, P.E. ; Isaac, J.J. ; Elton, D.J.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
6/7/1990 12:00:00 AM
Abstract :
Laser amplifiers with facet reflectivities of 3*10-5 over a bandwidth of 70 nm have been produced by combining a multilayer AR coating with angled device facets. The facet reflectivities were found to be highly reproducible. The amplifiers have a saturated output power in excess of +or-5 dBm.
Keywords :
III-V semiconductors; amplifiers; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; semiconductor junction lasers; 1.5 micron; GaInAsP; angled device facets; broadband; facet reflectivities; multilayer AR coating; semiconductor lasers; semiconductor optical amplifiers; ultralow reflectivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900539
