Title :
Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift
Author :
Takashino, Hiroyuki ; Tanizawa, Motoaki ; Okagaki, Takeshi ; Hayashi, Takashi ; Taya, Masatoshi ; Ishida, Hiroshi ; Ishikawa, Kiyoshi ; Inoue, Yasuo
Author_Institution :
Renesas Electron. Corp., Itami, Japan
Abstract :
In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by stress, ranging from a high tensile one to a high compressive one. Using this model, the quantum confinement effect, combined with large out-of-plane stress, is shown to play an important role to cause the threshold voltage shift as large as about 80 mV induced by high-film-stress contact etch-stop layer.
Keywords :
MOSFET; semiconductor device models; high-film-stress contact etch-stop layer; out-of-plane stress; quantum confinement effect; stress-induced nMOSFET; threshold voltage shift; MOSFET circuits; MOSFETs; Quantum dots; Threshold voltage; Voltage measurement; Contact etch-stop layer (CESL); confinement effect; nMOSFET; shallow-trench isolation (STI); stress; threshold voltage shift;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2217499
