A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage

Author

Wogong Zhang ; Kasper, Erich ; Oehme, Michael ; Kaschel, Mathias ; Stefani, Viktor ; Schulze, J.

Author_Institution

Inst. for Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany

fYear

2014

fDate

27-30 Aug. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA ~ 0.44 mA) the working point of the embedded schottky diode (cut-off frequency ~ 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.

Keywords

MIMIC; Schottky diodes; circuit tuning; elemental semiconductors; millimetre wave antennas; rectennas; silicon; RF excitation; Si; bias currents; conversion voltage; dynamic tuning range; frequency 75 GHz to 90 GHz; fully monolithic integrated Schottky rectenna; rectifying antenna; silicon monolithic mm-wave integrated circuits technology; Cutoff frequency; Frequency conversion; Radio frequency; Rectennas; Schottky diodes; Silicon; Voltage measurement; 85 GHz; Conversion voltage; Cut-off frequency; Rectenna; Schottky diode; SiMMWIC;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on

Conference_Location

Hefei

Type

conf

DOI

10.1109/RFIT.2014.6933240

Filename

6933240