Title :
An improved through line de-embedding method with even-odd mode measurement
Author :
Oupeng Li ; Wei Cheng ; Lei Wang ; Haiyan Lu ; Ruimin Xu
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).
Keywords :
III-V semiconductors; S-parameters; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; DHBT; InP; S-parameter matrix calculation; even-odd mode measurement; frequency 66 GHz; heterojunction bipolar transistors; line deembedding method; millimeter wave bipolar transistors; size 0.7 mum; Indium phosphide; Periodic structures; Probes; Scattering parameters; Semiconductor device measurement; Silicon compounds; Transmission line measurements;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on
Conference_Location :
Hefei
DOI :
10.1109/RFIT.2014.6933256
