An improved through line de-embedding method with even-odd mode measurement

Author

Oupeng Li ; Wei Cheng ; Lei Wang ; Haiyan Lu ; Ruimin Xu

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

fDate

27-30 Aug. 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

Keywords

III-V semiconductors; S-parameters; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; DHBT; InP; S-parameter matrix calculation; even-odd mode measurement; frequency 66 GHz; heterojunction bipolar transistors; line deembedding method; millimeter wave bipolar transistors; size 0.7 mum; Indium phosphide; Periodic structures; Probes; Scattering parameters; Semiconductor device measurement; Silicon compounds; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on

Conference_Location

Hefei

Type

conf

DOI

10.1109/RFIT.2014.6933256

Filename

6933256