46GHz differential power amplifier with 11GHz bandwidth using on-chip transformer

Author

Motoyoshi, Mizuki ; Fujishima, Minoru

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2014

fDate

27-30 Aug. 2014

Firstpage

1

Lastpage

3

Abstract

The millimeter-wave differential power amplifier using on-chip transformer is proposed to achieve high saturated power. To realize the high freqency operation, cross couple capatitor MOSFET is applied. The parasitic element is reduce the performance of the circuit. In this paper on-chip transformer is used as balun and impedance-matching network. The component loss is reduced by unifying the function of two components. Moreover, the layout is optimized to reduce the parasitic element and lead line of the MOSFET. The proposed power amplifier is fablicated using 1P12M 45nm CMOS process. The 46GHz center frequency with 11GHz bandwidth with peak gain of 8.5dB per stage was achieved. The power added efficiency is 18%.

Keywords

CMOS integrated circuits; MOSFET circuits; differential amplifiers; millimetre wave integrated circuits; millimetre wave power amplifiers; transformers; 1P12M CMOS; balun; bandwidth 11 GHz; bandwidth using on-chip transformer; component loss; cross couple capatitor MOSFET; frequency 46 GHz; gain 8.5 dB; impedance-matching network; millimeter-wave differential power amplifier; parasitic element; power added efficiency; size 45 nm; CMOS integrated circuits; Circuit faults; Impedance matching; Logic gates; MOSFET; Power amplifiers; Power demand; CMOS; high power efficiency; millimeter wave; power amplifier; transformer balun;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on

Conference_Location

Hefei

Type

conf

DOI

10.1109/RFIT.2014.6933263

Filename

6933263