SIMON-A simulator for single-electron tunnel devices and circuits

Author

Wasshuber, Christoph ; Kosina, Hans ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Austria

Volume

16

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

937

Lastpage

944

Abstract

SIMON is a single electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either with a plain Monte Carlo method or with a combination of the Monte Carlo and master equation approach. A graphic user interface allows the quick and easy design of circuits with single-electron tunnel devices. Furthermore, as an example of the usage of SIMON, we discuss the essential problem of random background charge and present possible solutions

Keywords

Monte Carlo methods; circuit analysis computing; master equation; quantum interference devices; semiconductor device models; tunnelling; Coulomb blockade; Monte Carlo method; SIMON; capacitor; circuit simulator; constant voltage source; cotunneling; graphic user interface; master equation; piecewise linearly time dependent voltage source; random background charge; single-electron tunnel device; stationary simulation; transient simulation; tunnel junction; voltage controlled voltage source; Analytical models; Capacitors; Circuit simulation; Computational modeling; Conductivity; Electrons; Equations; Monte Carlo methods; Probability; Voltage control;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.658562

Filename

658562