Title :
Lifetime broadening in GaAs-AlGaAs quantum well lasers
Author :
Kucharska, Alicia I. ; Robbins, David J.
Author_Institution :
Philips Res. Lab., Redhill, UK
fDate :
3/1/1990 12:00:00 AM
Abstract :
Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers shown that spectral broadening should be included in any realistic model of laser performance. A model of the lifetime broadening due to intraband Auger processes of the Landsberg type is described and developed for the case of electron-electron scattering in a 2-D system. The model is applied to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and the results are compared with those obtained using both a fixed intraband scattering time and one that varies as n-1/2, where n is the volume injected carrier density
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; electron-electron scattering; gallium arsenide; semiconductor device models; semiconductor junction lasers; spectral line breadth; 2D quantum well; GaAs-AlGaAs quantum well lasers; Landsberg type; electron-electron scattering; fixed intraband scattering time; gain calculations; gain-current relationships; intraband Auger processes; laser performance; lifetime broadening; realistic model; short wavelength quantum well lasers; spectral broadening; spontaneous emission spectra; volume injected carrier density; Charge carrier density; Density measurement; Gain measurement; Helium; Laboratories; Laser modes; Particle scattering; Quantum well lasers; Spontaneous emission; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
