Trench-Hall devices

Author

Vanha, Ralph Steiner ; Kroener, Friedrich ; Olbrich, Thomas ; Baresch, Robert ; Baltes, Henry

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

Volume

9

Issue

1

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

82

Lastpage

87

Abstract

A trench-Hall device sensitive to magnetic inductions parallel to the chip surface is reported in this paper. The vertically oriented active region is defined by two parallel trenches with a distance of only 2.4 /spl mu/m. Deep contacts connect the active region of the device at its bottom at a depth of 20 /spl mu/m. These deep contacts allow a symmetrical operating condition of the active region analogous to a lateral symmetrical Hall plate, which is favorable for dynamic offset reduction. With the presented technology, trench-Hall devices with a sensitivity of 320 V/A with a nonlinearity below 0.1% are realized. Additionally, the presented fabrication technique enables the electrically insulated cointegration of sensor and circuitry on a single CMOS chip.

Keywords

CMOS integrated circuits; Hall effect transducers; magnetic sensors; micromachining; microsensors; 2.4 mum; 20 mum; CMOS chip; active region; chip surface; circuitry; deep contacts; dynamic offset reduction; electrically insulated cointegration; fabrication technique; magnetic induction; nonlinearity; parallel trenches; sensor; symmetrical operating condition; trench-Hall devices; vertically oriented active region; CMOS process; CMOS technology; Carrier confinement; Contacts; Dielectrics and electrical insulation; Fabrication; Magnetic circuits; Magnetic devices; Magnetic sensors; Voltage;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.825781

Filename

825781