Title :
Dynamic and CW linewidth measurements of 1.55- mu m InGaAs-InGaAsP multiquantum well distributed feedback lasers
Author :
Wang, S.J. ; Ketelsen, L.J.P. ; McCrary, V.R. ; Twu, Y. ; Napholtz, S.G. ; Werner, W.V.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Measurement of the CW linewidth and frequency chirp as functions of modulation data rate and bias level for 1.55- mu m InGaAsP multiquantum-well distributed feedback lasers grown by low-pressure MOCVD are presented. The results show that the CW linewidth of asymmetric facet-coated multiquantum-well DFB lasers can be as low as 2.0 MHz at 13.5 mW output power. The frequency chirp increases with modulation data rate and is significantly larger if the laser off-state is below threshold than if it is above threshold. The 20 dB down chirp widths are in the range of 1.9-5 AA for 40 mA peak-to-peak modulation current at 10 Gb/s under above-threshold bias.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; semiconductor junction lasers; spectral line breadth; 1.55 micron; 10 Gbit/s; 13.5 mW; DFB lasers; InGaAs-InGaAsP; above threshold; asymmetric facet-coated; below threshold; bias level; down chirp widths; dynamic linewidth measurements; frequency chirp; laser off-state; low-pressure MOCVD; modulation data rate; multiquantum well distributed feedback lasers; peak-to-peak modulation current; Chirp modulation; Distributed feedback devices; Fiber lasers; Frequency measurement; Laser feedback; Laser modes; Laser theory; Photonic band gap; Power lasers; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
