Terraced substrate inner stripe visible semiconductor laser and its arrays

Author

Du, Guotong ; Zhang, Xiaobo ; Zhao, Fanghai ; Gao, Dingsan

Author_Institution

Dept. of Electron. Sci., Jilin Univ., Changchun, China

Volume

26

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

496

Lastpage

500

Abstract

Lasers emitting in the range of 7500-7800 Å, which have average current thresholds of 30-40 mA and maintain single transverse mode operation up to 20 mW, are reported. Life tests show that the lasers have almost no threshold change after 3000 h of aging at 4-mW CW operation. The terraced substrate inner stripe laser arrays have clean single-lobe far-field patterns with full width at half power of 6° in CW operation and 2.4° in pulsed operation

Keywords

ageing; laser modes; life testing; semiconductor device testing; semiconductor junction lasers; substrates; 20 mW; 30 to 40 mA; 3000 h; 4 mW; 7500 to 7800 Å; CW operation; aging; average current thresholds; clean single-lobe far-field patterns; life tests; no threshold change; pulsed operation; semiconductor laser arrays; single transverse mode operation; terraced substrate inner stripe laser arrays; visible semiconductor laser; Aging; Laser modes; Laser transitions; Life testing; Optical arrays; Optical pulses; Power lasers; Semiconductor laser arrays; Semiconductor lasers; Substrates;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.52125

Filename

52125