High power and narrow spectral linewidth 1.5 mu m MQW-DFB-LDs with low FM dip frequency

Author

Kitamura, M. ; Yamazaki, H. ; Ono, T. ; Sasaki, T. ; Hamao, N. ; Mito, I.

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

2

Issue

11

fYear

1990

Firstpage

778

Lastpage

780

Abstract

FM response as well as spectral linewidth were characterized for 1.5 mu m multiple-quantum-well distributed feedback laser diodes (MQW-DFB-LDs). It was experimentally demonstrated that the FM dip frequency where AM-FM phase delay rotates by 180 degrees decreases with reduced thermal resistance and reduced threshold current density, due to reduced thermal effect and enhanced carrier effect. 1.5- mu m MQW-DFB-LDs have been developed with <20 kHz FM dip frequency and relatively flat FM response, as well as <1 MHz spectral linewidth, in the 10-35 mW light output power range.<>

Keywords

current density; distributed feedback lasers; frequency modulation; optical modulation; semiconductor junction lasers; spectral line breadth; 1.5 micron; 10 to 35 mW; 20 kHz; AM-FM phase delay; FM response; MQW-DFB-LDs; enhanced carrier effect; high power laser diodes; light output power range; low FM dip frequency; multiple-quantum-well distributed feedback laser diodes; narrow spectral linewidth; reduced thermal resistance; reduced threshold current density; thermal effect; Density measurement; Electrical resistance measurement; Electronics packaging; Frequency modulation; Frequency shift keying; Gratings; Power generation; Quantum well devices; Thermal resistance; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.63218

Filename

63218