Title :
Length dependence of the saturation characteristics in 1.5- mu m multiple quantum well optical amplifiers
Author :
Eisenstein, G. ; Tessler, N. ; Koren, U. ; Wiesenfeld, J.M. ; Raybon, G. ; Burrus, C.A.
Author_Institution :
Dept. of Electr. Eng., Technion, Haifa, Israel
Abstract :
The dependence on amplifier length of gain and gain saturation characteristics in 1.5- mu m multiple-quantum-well optical amplifiers is reported. Gain measurements are presented for amplifiers with lengths of 200 mu m to 1 mm, and a simple model is introduced which relates gain and saturation characteristics to the amplifier length. The 1-mm-long device has superb properties, with a gain of 25.2 dB and a saturation output power of 40 mW.<>
Keywords :
optical saturation; semiconductor junction lasers; 1.5 micron; 200 micron to 1 mm; 25.2 dB; 40 mW; MQW; amplifier length; diode lasers; gain; laser gain measurements; multiple quantum well optical amplifiers; saturation characteristics; saturation output power; Carrier confinement; Charge carrier density; Gain measurement; Optical amplifiers; Optical saturation; Power amplifiers; Power generation; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
