Title :
High-power single mode InGaAs/AlGaAs laser diodes at 910 nm
Author :
Welch, D.F. ; Cardinal, M. ; Streifer, B. ; Scifres, D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
Abstract :
Single mode laser diodes have been fabricated from pseudomorphic InGaAs/AlGaAs quantum well epitaxial material operating up to 350 mW CW. The laser output is a single transverse and longitudinal mode to 180 mW, while the spectral output is centred near 910 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; semiconductor epitaxial layers; semiconductor junction lasers; 180 mW; 350 mW; 910 nm; InGaAs-AlGaAs; high power type; laser diodes; longitudinal mode; pseudomorphic material; quantum well epitaxial material; semiconductor lasers; single mode; transverse mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900157
