Title :
Low-frequency noise in near-fully-depleted TFSOI MOSFETs
Author :
Babcock, Jeffrey A. ; Schroder, Dieter K. ; Tseng, Ying-Che
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
Low-frequency (1/f) noise in near-fully-depleted Thin-Film Silicon-On-Insulator (TFSOI) CMOS transistors designed for sub-l-V applications is investigated in the subthreshold region, linear region, and saturation region of operation for the first time. The noise in these surface-channel devices is composed of a bias invariant 1/f component and a bias dependent generation-recombination (G/R) component that becomes enhanced in the subthreshold region of operation for both n- and p-channel MOSFETs. Results presented in this letter are consistent with the noise being dominated by a number fluctuation model. These results demonstrate that the bias independent 1/f noise spectrum of the n-channel TFSOI MOSFET is comparable to the 1/f noise level found in conventional bulk silicon submicron CMOS fabrication processes.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; semiconductor device noise; silicon-on-insulator; 0.5 mum; 1 V; bias dependent generation-recombination component; bias invariant 1/f component; linear region; low-frequency 1/f noise; n-channel MOSFETs; near-fully-depleted TFSOI MOSFETs; number fluctuation model; p-channel MOSFETs; saturation region; subthreshold region; surface-channel devices; thin-film SOI CMOS transistors; CMOS process; Fluctuations; Low-frequency noise; MOSFETs; Noise generators; Noise level; Semiconductor device modeling; Semiconductor thin films; Silicon on insulator technology; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
