Title :
High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
Author :
Chen, Qian ; Yang, J.W. ; Gaska, R. ; Khan, Muhammad Asad ; Shur, M.S. ; Sullivan, G.J. ; Sailor, A.L. ; Higgings, J.A. ; Ping, A.T. ; Adesida, I.
Author_Institution :
APA Opt. Inc., Blaine, MN, USA
Abstract :
We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFETs). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors.
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor doping; 0.25 mum; 100 mum; 18 V; 46 mA; 8.4 GHz; GaN-Al/sub 0.15/Ga/sub 0.85/N; GaN/AlGaN high-power microwave doped-channel HFETs; doped-channel GaN/AlGaN heterostructure field effect transistor; drain bias current; drain bias voltage; high gain; high sheet charge density; high-channel electron mobility; high-power performance; microwave power capability; optimal doping level; power density; wide frequency range; Aluminum gallium nitride; Displays; Doping; Electron mobility; Frequency; Gallium nitride; HEMTs; MODFETs; Microwave devices; Voltage;
Journal_Title :
Electron Device Letters, IEEE
