High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Author

Wu, Y.-F. ; Keller, B.P. ; Fini, Pedro ; Keller, S. ; Jenkins, T.J. ; Kehias, L.T. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

19

Issue

2

fYear

1998

Firstpage

50

Lastpage

53

Abstract

The use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the AlGaN/GaN MODFET structure. It is shown that the room temperature mobility has little degradation with increasing Al mole-fraction up to 50%. 0.7-μm gate-length Al/sub 0.5/Ga/sub 0.5/N/GaN MODFETs by optical lithography exhibit a current density of 1 A/mm and three-terminal breakdown voltages up to 200 V. These devices on sapphire substrates without thermal management also show CW power densities of 2.84 and 2.57 W/mm at 8 and 10 GHz, respectively, representing a marked performance improvement for GaN-based FETs."

Keywords

aluminium compounds; 0.7 mum; 10 GHz; 200 V; 8 GHz; Al/sub 0.5/Ga/sub 0.5/N-GaN; Al/sub 2/O/sub 3/; AlGaN/GaN MODFETs; CW power densities; DC performance; RF performance; current density; equivalent figures of merit; gate-length; high Al mole-fraction; high Al-content; optical lithography; room temperature mobility; sapphire substrates; temperature dependence; three-terminal breakdown voltages; ultrahigh performance; Aluminum gallium nitride; Current density; Degradation; Gallium nitride; HEMTs; Lithography; MODFETs; Optical devices; Temperature; Thermal management;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.658600

Filename

658600