Title :
GaAs MESFET fabrication without using photoresist
Author :
Shiralagi, K. ; Tsui, R. ; Goronkin, H.
Author_Institution :
Phoenix Corporate Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
MBE-grown MESFET wafers were patterned with a novel resistless approach and InAs was selectively grown in the source and drain regions. Photoresist and the associated process steps and chemicals were eliminated by utilizing gallium oxide as the masking material. Metallization for the source, drain and self aligned gate was carried out in one step, also without using any photoresist. Device structures with gate lengths ranging from submicron to 10 μm were fabricated.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; photolithography; semiconductor device metallisation; semiconductor technology; 0.6 to 10 mum; Ga/sub 2/O/sub 3/; Ga/sub 2/O/sub 3/ masking material; GaAs; GaAs MESFET fabrication; InAs-GaAs; MBE-grown MESFET wafers patterning; drain region; gate length; metallization; photolithography; resistless approach; selective InAs growth; self aligned gate; source region; Chemical processes; Etching; Fabrication; Gallium arsenide; MESFETs; Metallization; Molecular beam epitaxial growth; Protection; Resists; Substrates;
Journal_Title :
Electron Device Letters, IEEE
