DocumentCode
1305946
Title
High performance DFB-MQW lasers at 1.5 mu m grown by GSMBE
Author
Perales, A. ; Goldstein, L. ; Accard, A. ; Fernier, B. ; Leblond, Frederic ; Gourdain, C. ; Brosson, P.
Author_Institution
Lab. de Marcoussis, Centre de Recherches de la CGE, Marcoussis, France
Volume
26
Issue
4
fYear
1990
Firstpage
236
Lastpage
238
Abstract
1.5 mu m GaInAs multiquantum well distributed feedback lasers have been successfully fabricated on an InP grating substrate by GSMBE. DFB mode oscillation at high output power (50 mW) and narrow linewidth (1.3 MHz) have been obtained.
Keywords
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; optical communication equipment; semiconductor junction lasers; spectral line breadth; 1.5 micron; 50 mW; DFB mode oscillation; DFB-MQW lasers; GSMBE; GaInAsP-GaInAs-InP; III-V semiconductors; InP grating substrate; distributed feedback lasers; gas source MBE; high output power; multiquantum well; narrow linewidth; optical communication light source; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900159
Filename
82581
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