Title :
High performance DFB-MQW lasers at 1.5 mu m grown by GSMBE
Author :
Perales, A. ; Goldstein, L. ; Accard, A. ; Fernier, B. ; Leblond, Frederic ; Gourdain, C. ; Brosson, P.
Author_Institution :
Lab. de Marcoussis, Centre de Recherches de la CGE, Marcoussis, France
Abstract :
1.5 mu m GaInAs multiquantum well distributed feedback lasers have been successfully fabricated on an InP grating substrate by GSMBE. DFB mode oscillation at high output power (50 mW) and narrow linewidth (1.3 MHz) have been obtained.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; optical communication equipment; semiconductor junction lasers; spectral line breadth; 1.5 micron; 50 mW; DFB mode oscillation; DFB-MQW lasers; GSMBE; GaInAsP-GaInAs-InP; III-V semiconductors; InP grating substrate; distributed feedback lasers; gas source MBE; high output power; multiquantum well; narrow linewidth; optical communication light source; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900159
