• DocumentCode
    1305968
  • Title

    Closed-Form Analytical Expression for the Conductive and Dissipative Parameters of the MOS-C Equivalent Circuit

  • Author

    Daliento, S. ; Tari, O. ; Lancellotti, L.

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Naples Federico II, Naples, Italy
  • Volume
    58
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3643
  • Lastpage
    3646
  • Abstract
    The overall conductance of a metal-oxide-semiconductor structure, biased in the inversion regime, is described as the superposition of terms depending either on the minority carrier conductance GN or on the interface state dissipative contribution Rit. Derived analytical expressions are suitable for closed-form solutions allowing the extraction of the aforementioned parameters.
  • Keywords
    MIS structures; MOS capacitors; equivalent circuits; minority carriers; MOS-C equivalent circuit; closed-form analytical expression; conductive parameters; dissipative contribution; dissipative parameters; interface state; inversion regime; metal-oxide-semiconductor structure; minority carrier conductance; Analytical models; Equations; Equivalent circuits; Integrated circuit modeling; Mathematical model; Semiconductor process modeling; Solids; $G$– $f$ analysis; metal–oxide–semiconductor capacitance (MOS-C) equivalent circuit; parameters extraction;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2162847
  • Filename
    5997304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1305968