Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates

Author

Duan, Xiaofeng ; Huang, Yongqing ; Ren, Xiaomin ; Wang, Wei ; Huang, Hui ; Wang, Qi ; Cai, Shiwei

Author_Institution

State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China

Volume

58

Issue

11

fYear

2011

Firstpage

3948

Lastpage

3953

Abstract

A 1550-nm high-speed, high efficiency, and narrow-linewidth resonant cavity enhanced photodetector with three resonant cavities is demonstrated. The photodetector, operating at a long wavelength, is monolithically integrated by using a heteroepitaxy growth of an InP-based p-i-n structure on the GaAs-based multiple resonant cavities. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A peak quantum efficiency value of 70%, a spectral response linewidth less than 0.75 nm (full-width at half-maximum), and a 3-dB bandwidth of 36 GHz were simultaneously obtained in the device.

Keywords

III-V semiconductors; buffer layers; cavity resonators; epitaxial growth; gallium arsenide; indium compounds; p-i-n diodes; photodetectors; spectral line breadth; substrates; GaAs; InP; bandwidth 36 GHz; heteroepitaxy growth; high-quality heteroepitaxy; long wavelength multiple resonant cavities RCE photodetectors; multiple resonant cavity; narrow-linewidth resonant cavity enhanced photodetector; p-i-n structure; peak quantum efficiency value; size 1550 nm; spectral response linewidth; substrates; thin low-temperature buffer layer; Absorption; Cavity resonators; Gallium arsenide; Indium phosphide; Mirrors; PIN photodiodes; Long wavelength; narrow linewidth; photodetectors; resonator cavity enhanced (RCE);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2162958

Filename

5997305