Title :
Phase-Change Memory RESET Model Based on Detailed Cell Cooling Profile
Author :
Kwong, Kit Chu ; Jin He ; Mok, Philip K. T. ; Mansun Chan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A phase-change (PC) memory model that keeps track of the detailed cooling profile in the RESET process is described in this brief. By physically calculating the final crystal fraction resulting from the thermal dynamic of the PC material during the RESET process, the final resistance of the memory cell can be more accurately determined. The proposed model has been implemented in Verilog-A language and verified by experimental data.
Keywords :
cooling; phase change memories; semiconductor storage; RESET process; Verilog-A language; cell cooling profile; crystal fraction; memory cell; phase change memory RESET model; Cooling; Phase change materials; Phase change memory; Programming; Resistance; Temperature; Nonvolatile memory; phase-change memory (PCM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2162843
