• DocumentCode
    1305989
  • Title

    Phase-Change Memory RESET Model Based on Detailed Cell Cooling Profile

  • Author

    Kwong, Kit Chu ; Jin He ; Mok, Philip K. T. ; Mansun Chan

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • Volume
    58
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3635
  • Lastpage
    3638
  • Abstract
    A phase-change (PC) memory model that keeps track of the detailed cooling profile in the RESET process is described in this brief. By physically calculating the final crystal fraction resulting from the thermal dynamic of the PC material during the RESET process, the final resistance of the memory cell can be more accurately determined. The proposed model has been implemented in Verilog-A language and verified by experimental data.
  • Keywords
    cooling; phase change memories; semiconductor storage; RESET process; Verilog-A language; cell cooling profile; crystal fraction; memory cell; phase change memory RESET model; Cooling; Phase change materials; Phase change memory; Programming; Resistance; Temperature; Nonvolatile memory; phase-change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2162843
  • Filename
    5997307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1305989