DocumentCode :
1306041
Title :
Noise suppression scheme for gigabit-scale and gigabyte/s data-rate LSI´s
Author :
Takashima, Daisaburo ; Oowaki, Yukihito ; Watanabe, Shigeyoshi ; Ohuchi, Kazunori
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Yokohama, Japan
Volume :
33
Issue :
2
fYear :
1998
fDate :
2/1/1998 12:00:00 AM
Firstpage :
260
Lastpage :
267
Abstract :
In order to reduce the power/ground noise due to the off-chip parasitic inductance and realize gigabit-scale and ultra-high bandwidth large scale integrations (LSI´s), this paper proposes two new techniques: (1) a constant-current voltage-down converter (VDC) which reduces the differential mode noise caused by internal peak current in a chip, and (2) a partially inverted data bus architecture which suppresses the common-mode noise caused by driving a large amount of output buffers. The new VDC requires almost constant current through an external Vdd/Vss pin in spite of an internal large peak current, resulting in the suppression of the inductance induced voltage bounce and oscillation. Using the new VDC, the power/ground noise in a 1-Gb DRAM is reduced to 20% of the conventional one. The new bus architecture reduces the common-mode noise to 1/n by inverting output bus data partially, using only n-1 bit flag signals. Moreover, the modified new bus architecture reduces the noise to 1/2n by using only n bit flag signals. These architectures achieve the ultra-high data transfer rate of 16 GB/s to 32 GB/s
Keywords :
CMOS memory circuits; DRAM chips; inductance; integrated circuit noise; memory architecture; 1 Gbit; 16 to 32 GB/s; DRAM; common-mode noise; constant-current voltage-down converter; data-rate LSI; differential mode noise; flag signals; gigabit-scale LSI; internal peak current; noise suppression scheme; off-chip parasitic inductance; output buffers; partially inverted data bus architecture; power/ground noise; ultra-high bandwidth; voltage bounce; Bandwidth; CMOS integrated circuits; Circuit noise; Inductance; Integrated circuit noise; Large scale integration; Noise reduction; Random access memory; Semiconductor device noise; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.658628
Filename :
658628
Link To Document :
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