• DocumentCode
    1306088
  • Title

    Experimental Investigations of Characteristic Temperatures of Hybrid Silicon Lasers

  • Author

    Park, Heejung ; Srinivasan, P. ; Davenport, Michael L. ; Sysak, Mathew N. ; Jones, Roy

  • Author_Institution
    Photonics Technology Laboratory, Intel Corporation, Santa Clara, CA, USA
  • Volume
    48
  • Issue
    12
  • fYear
    2012
  • Firstpage
    1512
  • Lastpage
    1518
  • Abstract
    This paper investigates the characteristic temperatures of hybrid silicon lasers by decomposing them into the temperature dependency of modal gain, transparent current density, internal loss, and injection efficiency under pulsed operation, and comparing them to III–V broad area lasers fabricated using the same InP epitaxial structure. This paper reveals that the limiting factors of the characteristic temperatures for both types of lasers are the transparent current density and injection efficiency. The comparison suggests that there is no fundamental aspect in the hybrid laser architecture that degrades the characteristic temperatures.
  • Keywords
    Measurement by laser beam; Optical interconnections; Photonics; Semiconductor lasers; Silicon devices; Temperature measurement; Hybrid silicon laser; optical interconnects; semiconductor laser; silicon photonics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2012.2222870
  • Filename
    6323004