DocumentCode
1306088
Title
Experimental Investigations of Characteristic Temperatures of Hybrid Silicon Lasers
Author
Park, Heejung ; Srinivasan, P. ; Davenport, Michael L. ; Sysak, Mathew N. ; Jones, Roy
Author_Institution
Photonics Technology Laboratory, Intel Corporation, Santa Clara, CA, USA
Volume
48
Issue
12
fYear
2012
Firstpage
1512
Lastpage
1518
Abstract
This paper investigates the characteristic temperatures of hybrid silicon lasers by decomposing them into the temperature dependency of modal gain, transparent current density, internal loss, and injection efficiency under pulsed operation, and comparing them to III–V broad area lasers fabricated using the same InP epitaxial structure. This paper reveals that the limiting factors of the characteristic temperatures for both types of lasers are the transparent current density and injection efficiency. The comparison suggests that there is no fundamental aspect in the hybrid laser architecture that degrades the characteristic temperatures.
Keywords
Measurement by laser beam; Optical interconnections; Photonics; Semiconductor lasers; Silicon devices; Temperature measurement; Hybrid silicon laser; optical interconnects; semiconductor laser; silicon photonics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2012.2222870
Filename
6323004
Link To Document