• DocumentCode
    1306094
  • Title

    Detectivity of gallium arsenide on silicon substrate photoconductive detectors

  • Author

    Constant, M. ; Decoster, D. ; Bartenlian, B. ; Pascal, D.

  • Author_Institution
    Lab. de Spectrochimie Infrarouge et Raman, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq, France
  • Volume
    26
  • Issue
    4
  • fYear
    1990
  • Firstpage
    239
  • Lastpage
    241
  • Abstract
    Planar photoconductors made with GaAs on silicon substrate have been studied with respect to static and dynamic responsivities as well as noise levels, in the 1 Hz-100 kHz frequency range. The results obtained have led to the determination of the specific detectivity which is in turn compared to those of GaAs planar photoconductors and Si photodiodes.
  • Keywords
    III-V semiconductors; dynamic response; electron device noise; gallium arsenide; photoconducting devices; photodetectors; 1 Hz to 100 kHz; GaAs-Si; III-V semiconductors; Si substrate; dynamic responsivities; noise levels; photoconductive detectors; static response;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900161
  • Filename
    82583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306094