Title :
Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering
Author :
Valdueza-Felip, Sirona ; Monteagudo-Lerma, Laura ; Mangeney, Juliette ; González-Herráez, Miguel ; Julien, François H. ; Naranjo, Fernando B.
Author_Institution :
INAC, CEA Grenoble, Grenoble, France
Abstract :
We report on the nonlinear optical absorption of InN films deposited on GaN templates by radio-frequency (RF) sputtering. The layers are characterized through the pump-probe technique at 1.55 μm, by obtaining a nonlinear absorption coefficient of 167±30 cm/GW with a nonlinear response recovery time of 380 fs. This nonlinear behavior is attributed to a two-photon absorption process followed by a free carrier absorption by the photogenerated carriers. These results render InN films deposited by RF sputtering particularly suitable for ultrafast all-optical devices based on low-cost technology.
Keywords :
absorption; indium compounds; nitrogen compounds; optical communication; sputtering; InN; RF sputtering; free carrier absorption; indium nitride films; nonlinear optical absorption; nonlinear response recovery time; optical telecommunication wavelengths; photogenerated carriers; radio-frequency sputtering; two-photon absorption process; ultrafast all-optical devices; Absorption; Nonlinear optics; Optical films; Optical pumping; Optical reflection; Ultrafast optics; Indium nitride; nonlinear absorption; nonlinear optical devices; pump-probe; sputtering;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2217484
