Title :
Direct extraction of a distributed nonlinear FET model from pulsed I-V/pulsed S-parameter measurements
Author :
Mallet-Guy, B. ; Ouarch, Z. ; Prigent, M. ; Quéré, R. ; Obregon, J.
Author_Institution :
CNRS, Brive, France
fDate :
2/1/1998 12:00:00 AM
Abstract :
In this work, a method for the direct extraction of a field-effect transistor (FET) distributed model is presented. This technique makes use of both pulsed I-V and pulsed S-parameter measurements. Results given are very efficient, especially in terms of time computation and uniqueness. Using this method, the distributed model provides a reliable mean of describing the FET´s distributive nature
Keywords :
S-parameters; equivalent circuits; field effect transistors; semiconductor device models; direct extraction; distributed nonlinear FET model; field-effect transistor; pulsed I-V measurements; pulsed S-parameter measurements; Capacitors; Data mining; Equivalent circuits; FETs; Frequency; Power transmission lines; Pulse measurements; Scattering parameters; Topology; Transmission line measurements;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
