Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT´s

Author

Borgarino, Mattia ; Menozzi, Roberto ; Baeyens, Yves ; Cova, Paolo ; Fantini, Fausto

Author_Institution

Dipartimento di Ingegneria dell´´Inf., Parma Univ., Italy

Volume

45

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

366

Lastpage

372

Abstract

This paper reports on hot electron (HE) degradation of 0.25-μm Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs PHEMT´s by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias condition

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device reliability; semiconductor device testing; 0.25 micron; AlGaAs-InGaAs-GaAs; PHEMT; RF characteristics; bias circuit; bias point; device gain; device operation; fixed current bias scheme; hot electron degradation; hot electron stress; stress bias condition; threshold voltage; Degradation; Electromagnetic heating; Electrons; Gallium arsenide; Indium gallium arsenide; MODFET circuits; Microwave devices; PHEMTs; Radio frequency; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658668

Filename

658668