• DocumentCode
    1306357
  • Title

    Scaling theory of liquid-crystal displays addressed by thin-film transistors

  • Author

    Tsukada, Toshihisa

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    45
  • Issue
    2
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    387
  • Lastpage
    393
  • Abstract
    The proposed scaling theory for designing thin-film transistor/liquid-crystal displays (TFT/LCD´s) addresses the need for a new design theory for fabricating TFT panels. A constant field is assumed, the same as for MOSFET scaling. A constant voltage is assumed based on the fact that the operational voltages of liquid-crystal cells are not easily scaled. Scaling is found to improve the gate delay and offset voltage characteristics in spite of the narrower busline width and the smaller pixel capacitance. The same improvements are observed even in larger, higher-resolution panels. This scheme to scale the pixel capacitance can be extended to an unloaded-pixel scheme in which there is no storage capacitance in the pixels. The trade-off in this scheme is between a short charging-time constant and a large aperture ratio, and a large voltage offset and a short discharging-time constant. The scaling theory is shown to be a valuable tool to design the next-generation TFT panels
  • Keywords
    MISFET; amorphous semiconductors; capacitance; elemental semiconductors; field effect integrated circuits; flat panel displays; hydrogen; liquid crystal displays; silicon; thin film transistors; Si:H; TFT addressed LCD; TFT panel fabrication; aperture ratio; constant field; constant voltage; design theory; discharging-time constant; gate delay; liquid-crystal displays; offset voltage characteristics; pixel capacitance; scaling theory; thin-film transistors; unloaded-pixel scheme; Amorphous silicon; Apertures; Capacitance; Computer displays; Flat panel displays; Liquid crystal devices; Liquid crystal displays; Liquid crystals; Thin film transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658671
  • Filename
    658671