• DocumentCode
    1306374
  • Title

    Poly-Si/poly-SiCx heterojunction thin-film transistors

  • Author

    Choi, Kwangsoo ; Matsumura, Masakiyo

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    45
  • Issue
    2
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    401
  • Lastpage
    405
  • Abstract
    We have proposed heterojunction thin-film transistors having a stacked structure of poly-crystal silicon-carbon (SiCx) and Si thin films, both of which are prepared by an excimer-laser crystallization method. A Si/SiCx interface after intense excimer-laser irradiation for crystallization, was as abrupt as that of the as-deposited and amorphous structure. The device had a relatively high mobility of about 4 cm2/Vs and a sufficiently low leakage current of an order of 10-14 A/μm even under intense light illumination conditions
  • Keywords
    MISFET; carrier mobility; elemental semiconductors; field effect transistor switches; leakage currents; silicon; silicon compounds; thin film transistors; wide band gap semiconductors; Si thin films; Si-SiC-Si-SiN; excimer-laser crystallization method; heterojunction thin-film transistors; intense light illumination conditions; low leakage current; mobility; poly-Si/poly-SiCx heterojunction TFT; polysilicon films; stacked structure; Amorphous materials; Crystallization; Heterojunctions; Leakage current; Lighting; Liquid crystal displays; Semiconductor thin films; Silicon carbide; Thin film transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658673
  • Filename
    658673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306374