Finite-element analysis of second-harmonic generation in AlGaAs waveguides

Author

Katsriku, F.A. ; Rahman, B.M.A. ; Grattan, K.T.V.

Author_Institution

Dept. of Electr. Electron. & Inf. Eng., City Univ., London, UK

Volume

36

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

282

Lastpage

289

Abstract

A rigorous and efficient finite-element method based beam propagation method is used to model second-harmonic generation (SHG) in semiconductor waveguides. The effect of loss on the efficiency of SHG is analyzed and it is shown that, under certain conditions, GaAlAs-based devices with a lower nonlinear susceptibility tensor could be more efficient than GaAs-based devices with a higher nonlinear susceptibility tensor. Numerical results are also presented, to show the effect of domain fabrication error, in the case of quasi-phase-matched devices, on the efficiency of SHG.

Keywords

III-V semiconductors; aluminium compounds; finite element analysis; gallium arsenide; nonlinear optical susceptibility; optical harmonic generation; optical phase matching; optical waveguide theory; optical waveguides; tensors; AlGaAs waveguides; GaAlAs; GaAlAs-based devices; beam propagation method; domain fabrication error; finite-element analysis; finite-element method; higher nonlinear susceptibility tensor; lower nonlinear susceptibility tensor; optical SHG efficiency; quasi-phase-matched devices; second-harmonic generation; semiconductor waveguides; Crystalline materials; Finite element methods; Gallium arsenide; Nonlinear optics; Optical frequency conversion; Optical waveguides; Semiconductor materials; Semiconductor waveguides; Tensile stress; Wafer bonding;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.825874

Filename

825874