Title :
Characteristics of the base coupled insulated gate thyristor: experiment and analytical modeling
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
fDate :
2/1/1998 12:00:00 AM
Abstract :
This paper describes the theoretical and experimental characteristics of a new insulated-gate thyristor structure called Base Coupled Insulated Gate Thyristor (BC-IGTH) in which the N-base region in the vicinity of the turn-off gate is prevented from being flooded with carriers in the on-state by controlling the voltage of this area by a NMOS operated by the same gate electrode. The characteristics of the BC-IGTH is experimentally studied and the behavior is explained with the help of analytical equations
Keywords :
MOS-controlled thyristors; semiconductor device models; MOS gated devices; N-base region; NMOS; analytical modeling; base coupled insulated gate thyristor; turnoff gate; Analytical models; Coupled mode analysis; Electrodes; Equations; Insulation; MOS devices; MOSFET circuits; Physics; Thyristors; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
