DocumentCode
1306512
Title
Characteristics of the base coupled insulated gate thyristor: experiment and analytical modeling
Author
Ajit, J.S.
Author_Institution
Int. Rectifier Corp., El Segundo, CA, USA
Volume
45
Issue
2
fYear
1998
fDate
2/1/1998 12:00:00 AM
Firstpage
543
Lastpage
553
Abstract
This paper describes the theoretical and experimental characteristics of a new insulated-gate thyristor structure called Base Coupled Insulated Gate Thyristor (BC-IGTH) in which the N-base region in the vicinity of the turn-off gate is prevented from being flooded with carriers in the on-state by controlling the voltage of this area by a NMOS operated by the same gate electrode. The characteristics of the BC-IGTH is experimentally studied and the behavior is explained with the help of analytical equations
Keywords
MOS-controlled thyristors; semiconductor device models; MOS gated devices; N-base region; NMOS; analytical modeling; base coupled insulated gate thyristor; turnoff gate; Analytical models; Coupled mode analysis; Electrodes; Equations; Insulation; MOS devices; MOSFET circuits; Physics; Thyristors; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.658692
Filename
658692
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